? semiconductor components industries, llc, 2005 may, 2005 ? rev. p1 1 publication order number: NTMS4118N/d NTMS4118N product preview power mosfet 30 v, 14.8 a, single n?channel, so?8 features ? low r ds(on) ? fast switching times ? pb?free package is available applications ? notebooks, graphics cards ? low side switch ? dc?dc maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 20 v continuous drain ct(nt1) steady t a = 25 c i d 12.3 a current (note 1) steady state t a = 85 c d 8.8 t 10 s t a = 25 c 14.8 power dissipation steady p d 1.5 w power dissi ation (note 1) steady state t a = 25 c p d 1 . 5 w t 10 s t a = 25 c 2.2 continuous drain c rrent (note 2) t a = 25 c i d 9.1 a current (note 2) steady state t a = 85 c d 6.6 power dissipation y state t a =25 c p d 0.9 w power dissi ation (note 2) t a = 25 c p d 0 . 9 w pulsed drain current tp = 10 s i dm 44 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 2.8 a single pulse drain?to?source avalanche energy e as tbd mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance maximum ratings parameter symbol value unit junction?to?ambient ? steady state (note 1) r ja 81.5 c/w junction?to?ambient ? t 10 s (note 1) r ja 56 junction?to?ambient ? steady state (note 2) r ja 146.5 maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area 1.127 in sq [1 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size (cu area = tbd in sq). this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. g d s device package shipping 2 ordering information NTMS4118Nr2 so?8 2500/tape & reel 30 v 6.5 m @ 4.5 v 4.6 m @ 10 v r ds(on) typ 14.8 a i d max (note 1) v (br)dss so?8 case 751 style 12 marking diagram/ pin assignment 4118n = specific device code a = assembly location l = wafer lot y = year w = work week = pb?free package 18 drain drain drain drain source source source gate (top view) 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 1 8 http://onsemi.com NTMS4118Nr2g so?8 (pb?free) 2500/tape & reel 4118n ayww
NTMS4118N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j tbd mv/ c zero gate voltage drain current i dss v 0v v 24 v t j = 25 c 1.0 a v gs = 0 v, v ds = 24 v t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.5 v negative threshold temperature coefficient v gs(th) /t j tbd mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 12.3 a 4.6 6.0 m () v gs = 4.5 v, i d = 10.3 a 6.5 8.5 forward transconductance g fs v ds = 15 v, i d = 10 a 1.5 s charges, capacitances and gate resistance input capacitance c iss 3600 pf output capacitance c oss v gs = 0 v, f = 1.0 mhz, v ds = 24 v 550 reverse transfer capacitance c rss gs ,, ds 320 total gate charge q g(tot) 32 35 nc threshold gate charge q g(th) v =45v v =24v i =103a 3.8 gate?to?source charge q gs v gs = 4.5 v, v ds = 24 v, i d = 10.3 a 11 gate?to?drain charge q gd 15.2 gate resistance r g 1.2 switching characteristics, v gs = 4.5 v (note 4) turn?on delay time t d(on) 29.6 ns rise time t r v gs = 4.5 v, v d s = 15 v, 30.4 turn?off delay time t d(off) v gs = 4 . 5 v , v ds = 15 v , i d = 1.0 a, r g = 6.0 37.6 fall time t f 26.7 drain?source diode characteristics forward diode voltage v sd v =0v i =28a t j = 25 c 0.8 1.0 v v gs = 0 v, i s = 2.8 a t j = 125 c tbd reverse recovery time t rr 33.2 ns charge time t a v gs = 0 v, di s /dt = 100 a/ s, 17 discharge time t b v gs = 0 v , di s /dt = 100 a/ s , i s = 2.8 a 16 reverse recovery charge q rr 0.0335 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTMS4118N http://onsemi.com 3 package dimensions so?8 case 751?07 issue af 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 soldering footprint* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m style 12: pin 1. source 2. source 3. source 4. gate 5. drain 6. drain 7. drain 8. drain
NTMS4118N http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTMS4118N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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